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| IL66B PHOTODARLINGTON OPTOCOUPLER FEATURES * Internal RBE for High Stability * High Current Transfer Ratio at IF=2 mA, VCE=5 V IL66B-1, 200% min. IL66B-2, 750% min. * Withstand Test Voltage, 5300 VACRMS * No Base Connection * High Isolation Resistance * Standard Plastic DIP Package * Underwriters Lab Approval #E52744 V * VDE 0884 Available with Option 1 DE Dimensions in inches (mm) 3 2 1 pin one ID. .248 (6.30) .256 (6.50) Anode 1 Cathode 2 NC 3 6 NC 5 Collector 4 Emitter 4 5 .335 (8.50) .343 (8.70) .039 (1.00) min. 6 .300 (7.62) typ. .130 (3.30) .138 (3.50) DESCRIPTION The IL66B is an optically coupled isolator employing a Gallium Arsenide infrared emitter and a silicon photodarlington detector. Switching can be accomplished while maintaining a high degree of isolation between driving and load circuits. They can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. Maximum Ratings (at 25C) Emitter Peak Reverse Voltage ........................................6 V Continuous Forward Current .........................60 mA Power Dissipation at 25C..........................100 mW Derate Linearly from 55C....................1.33 mW/C Detector Collector-Emitter Breakdown Voltage.............. 60 V Emitter-Collector Breakdown Voltage................ 5 V Power Dissipation at 25C Ambient ...........200 mW Derate Linearly from 25C......................2.6 mW/C Package Isolation Test Voltage (t=1 sec.) ........ 5300 VACRMS Isolation Resistance VIO=500 V, TA=25C ............................... 1012 VIO=500 V, TA=100C ............................. 1011 Total Dissipation at 25C ............................250 mW Derate Linearly from 25C......................3.3 mW/C Creepage Path ........................................ 7 min mm Clearance Path........................................ 7 min mm Storage Temperature....................-55C to +150C Operating Temperature ................-55C to +100C Lead Soldering Time at 260C .................... 10 sec. 4 typ. 18 typ. .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. .010 (.25) typ. .300 (7.62) .347 (8.82) .114 (2.90) .130 (3.30) .018 (0.45) .022 (0.55) Electrical Characteristics (TA=25C) Symbol Emitter Forward Voltage Reverse Current Capacitance Detector Breakdown Voltage Collector-Emitter Leakage Current Collector-Emitter Package Current Transfer Ratio IL66B-1 IL66B-2 Saturation Voltage Collector-Emitter Turn-On,Turn-Off Time VCEsat ton,toff CTR 200 750 1000 1.0 200 % % V s IF=2 mA, VCE=5 V BVCEO ICEO 60 1.0 100 V nA IC=100 A, IF=0 VCE=50 V, IF=0 VF IR CO 1.25 0.01 25 1.5 100 V A pF IF=10 mA VR=3.0 V VR=0 V Min. Typ. Max. Unit Condition IC=10 mA, IF=10 mA VCC=10 V IF=2 mA, RL=100 5-1 This document was created with FrameMaker 4.0.4 Figure 1. Forward voltage versus forward current 1.4 VF - Forward Voltage - V Figure 5. High/low propagation delay versus collector load resistance and LED current 50 1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1 Ta = -55C tpHL - High/Low Propagation Delay - s Ta = 25C 40 30 20 10 0 0 10K Ta = 25C Vcc = 5 V Vth = 1.5 V 220 Ta = 85C 1 10 IF - Forward Current - mA 100 5 10 15 IF - LED Current - mA 20 Figure 2. Normalized non-saturated and saturated CTRce versus LED current 2.0 Figure 6. Low/high propagation delay versus collector load resistance and LED current tpLH - Low/High Propagation Delay - s 150 125 100 75 50 25 0 0 5 10 15 IF - LED Current - mA 20 Ta = 25C Vcc = 5 V Vth = 1.5 V 2K 10K NCTRce - Normalized CTRce 1.5 1.0 0.5 Normalized to: Ta = 25C Vce = 5 V IF = 2 mA Vce = 5 V Vce = 1 V 0.0 .1 1 10 IF - LED Current - mA 100 220 Figure 3. Normalized non-saturated and saturated CTRce versus LED current NCTRce - Normalized CTRce 1.2 1.0 0.8 0.6 0.4 0.2 0.0 .1 1 10 100 1000 IF - LED Current - mA Vce = .4 V Normalized to: Ta = 25C Vce = 5 V IF = 10 ma Vce = 5 V Figure 4. Non-saturated and saturated collector emitter current versus LED current 10000 Vce = 5 V 1000 100 10 1 .1 .01 .1 1 10 IF - LED Current - mA 100 Vce = .4 V Ice - Collector-emitter current - mA .001 IL66B 5-2 |
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